Research on the effect of nitrogen implantation doses on the structure of separation by implantation of oxygen and nitrogen
文献类型：期刊论文
| 作者 | Zhang, EX ; Yi, WB ; Chen, J ; Zhang, ZX ; Wang, X |
| 刊名 | SMART MATERIALS & STRUCTURES
 |
| 出版日期 | 2005 |
| 卷号 | 14期号:4页码:N42-N45 |
| 关键词 | ION-BEAM SYNTHESIS BURIED LAYERS SILICON |
| ISSN号 | 0964-1726 |
| 通讯作者 | Zhang, EX, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Ion Beam Lab, Shanghai 20050, Peoples R China |
| 学科主题 | Instruments & Instrumentation; Materials Science, Multidisciplinary |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95353]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, EX,Yi, WB,Chen, J,et al. Research on the effect of nitrogen implantation doses on the structure of separation by implantation of oxygen and nitrogen[J]. SMART MATERIALS & STRUCTURES,2005,14(4):N42-N45. |
| APA | Zhang, EX,Yi, WB,Chen, J,Zhang, ZX,&Wang, X.(2005).Research on the effect of nitrogen implantation doses on the structure of separation by implantation of oxygen and nitrogen.SMART MATERIALS & STRUCTURES,14(4),N42-N45. |
| MLA | Zhang, EX,et al."Research on the effect of nitrogen implantation doses on the structure of separation by implantation of oxygen and nitrogen".SMART MATERIALS & STRUCTURES 14.4(2005):N42-N45. |
入库方式： OAI收割
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