Fabrication and mechanism of relaxed SiGe-on-insulator by modified Ge condensation
文献类型：期刊论文
| 作者 | Di, ZF ; Zhang, M ; Liu, WL ; Luo, SH ; Song, ZT ; Lin, CL ; Huang, AP ; Chu, PK |
| 刊名 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
 |
| 出版日期 | 2005 |
| 卷号 | 23期号:4页码:1637-1640 |
| 关键词 | HOLE MOBILITY ENHANCEMENT STRAINED-SI OXIDATION BEHAVIOR HIGH-PERFORMANCE COMPLIANT OXIDE N-MOSFETS GERMANIUM SUBSTRATE ELECTRON ISLANDS |
| ISSN号 | 1071-1023 |
| 通讯作者 | Chu, PK, City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95355]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Di, ZF,Zhang, M,Liu, WL,et al. Fabrication and mechanism of relaxed SiGe-on-insulator by modified Ge condensation[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2005,23(4):1637-1640. |
| APA | Di, ZF.,Zhang, M.,Liu, WL.,Luo, SH.,Song, ZT.,...&Chu, PK.(2005).Fabrication and mechanism of relaxed SiGe-on-insulator by modified Ge condensation.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,23(4),1637-1640. |
| MLA | Di, ZF,et al."Fabrication and mechanism of relaxed SiGe-on-insulator by modified Ge condensation".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 23.4(2005):1637-1640. |
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