Effect of nitrogen implantation technologies on total dose rad-hardness of SIMON materials
文献类型：期刊论文
| 作者 | Zhang, Enxia1 ; Qian, Cong1 ; Zhang, Zhengxuan1 ; Wang, Xi1 ; Zhang, Guoqiang2 ; Li, Ning2 ; Zheng, Zhongshan2 ; Liu, Zhongli2 |
| 刊名 | Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
 |
| 出版日期 | 2005 |
| 卷号 | 26期号:6页码:1269-1272 |
| 中文摘要 | Separation by implantation of oxygen and nitrogen (SIMON) materials are fabricated by one-step and two-step annealing, respectively. The distribution of the ions in the wafers is analyzed by secondary ions mass spectrometer (SIMS), and the results show th |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95356]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, Enxia1,Qian, Cong1,Zhang, Zhengxuan1,et al. Effect of nitrogen implantation technologies on total dose rad-hardness of SIMON materials[J]. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,2005,26(6):1269-1272. |
| APA | Zhang, Enxia1.,Qian, Cong1.,Zhang, Zhengxuan1.,Wang, Xi1.,Zhang, Guoqiang2.,...&Liu, Zhongli2.(2005).Effect of nitrogen implantation technologies on total dose rad-hardness of SIMON materials.Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,26(6),1269-1272. |
| MLA | Zhang, Enxia1,et al."Effect of nitrogen implantation technologies on total dose rad-hardness of SIMON materials".Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 26.6(2005):1269-1272. |
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