Investigation of Ge nanocrytals in a metal-insulator-semiconductor structure with a HfO2/SiO2 stack as the tunnel dielectric
文献类型：期刊论文
| 作者 | Wang, SY ; Liu, WL ; Wan, Q ; Dai, JY ; Lee, PF ; Suhua, L ; Shen, QW ; Zhang, M ; Song, ZT ; Lin, CL |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2005 |
| 卷号 | 86期号:11页码:113105-113105 |
| 关键词 | NANOCRYSTAL MEMORY DEVICE GATE DIELECTRICS CHARGE-STORAGE SILICON NANOCRYSTALS THERMAL-STABILITY DEPOSITION |
| ISSN号 | 0003-6951 |
| 通讯作者 | Wang, SY, Chinese Acad Sci, Res Ctr Semicond Funct Film Engn Technol, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95359]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, SY,Liu, WL,Wan, Q,et al. Investigation of Ge nanocrytals in a metal-insulator-semiconductor structure with a HfO2/SiO2 stack as the tunnel dielectric[J]. APPLIED PHYSICS LETTERS,2005,86(11):113105-113105. |
| APA | Wang, SY.,Liu, WL.,Wan, Q.,Dai, JY.,Lee, PF.,...&Lin, CL.(2005).Investigation of Ge nanocrytals in a metal-insulator-semiconductor structure with a HfO2/SiO2 stack as the tunnel dielectric.APPLIED PHYSICS LETTERS,86(11),113105-113105. |
| MLA | Wang, SY,et al."Investigation of Ge nanocrytals in a metal-insulator-semiconductor structure with a HfO2/SiO2 stack as the tunnel dielectric".APPLIED PHYSICS LETTERS 86.11(2005):113105-113105. |
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