Effect of annealing temperature on the microstructure and resistivity of Ge2Sb2Te5 films
文献类型：期刊论文
| 作者 | Liu, B ; Song, ZT ; Feng, SL ; Chen, B |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2004 |
| 卷号 | 21期号:6页码:1143-1146 |
| 关键词 | REVERSIBLE PHASE-TRANSITION AMORPHOUS THIN-FILMS ELECTRICAL-PROPERTIES TELLURIDE GLASSES MEMORY CRYSTALLIZATION SEMICONDUCTORS GE20TE80-XBIX |
| ISSN号 | 0256-307X |
| 通讯作者 | Liu, B, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr Funct Semicond Film Engn & Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Multidisciplinary |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95370]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, B,Song, ZT,Feng, SL,et al. Effect of annealing temperature on the microstructure and resistivity of Ge2Sb2Te5 films[J]. CHINESE PHYSICS LETTERS,2004,21(6):1143-1146. |
| APA | Liu, B,Song, ZT,Feng, SL,&Chen, B.(2004).Effect of annealing temperature on the microstructure and resistivity of Ge2Sb2Te5 films.CHINESE PHYSICS LETTERS,21(6),1143-1146. |
| MLA | Liu, B,et al."Effect of annealing temperature on the microstructure and resistivity of Ge2Sb2Te5 films".CHINESE PHYSICS LETTERS 21.6(2004):1143-1146. |
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