中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Electrical properties and microstructure of buried oxide (BOX) of SIMOX studied by Conducting Atomic Force Microscopy (C-AFM)

文献类型:期刊论文

作者Song, ZR ; Chen, KW ; Yu, YH ; Luo, EZ ; Shen, DS
刊名THIN SOLID FILMS
出版日期2004
卷号459期号:1-2页码:58-62
关键词ON-INSULATOR TECHNOLOGY
ISSN号0040-6090
通讯作者Yu, YH, Chinese Acad Sci, Ion Beam Lab, Shanghai Inst Microsyst & Informat Technol, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题Materials Science, Multidisciplinary; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95379]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Song, ZR,Chen, KW,Yu, YH,et al. Electrical properties and microstructure of buried oxide (BOX) of SIMOX studied by Conducting Atomic Force Microscopy (C-AFM)[J]. THIN SOLID FILMS,2004,459(1-2):58-62.
APA Song, ZR,Chen, KW,Yu, YH,Luo, EZ,&Shen, DS.(2004).Electrical properties and microstructure of buried oxide (BOX) of SIMOX studied by Conducting Atomic Force Microscopy (C-AFM).THIN SOLID FILMS,459(1-2),58-62.
MLA Song, ZR,et al."Electrical properties and microstructure of buried oxide (BOX) of SIMOX studied by Conducting Atomic Force Microscopy (C-AFM)".THIN SOLID FILMS 459.1-2(2004):58-62.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。