Novel material for nonvolatile ovonic unified memory (OUM)-Ag11In12Te26Sb51 phase change semiconductor
文献类型：期刊论文
| 作者 | Liu, B ; Song, ZT ; Zhang, T ; Feng, SL ; Gan, FX |
| 刊名 | CHINESE PHYSICS
 |
| 出版日期 | 2004 |
| 卷号 | 13期号:7页码:1167-1170 |
| 关键词 | AMORPHOUS THIN-FILMS OPTICAL DISK TELLURIDE GLASSES HIGH-DENSITY CRYSTALLIZATION TRANSITION GE20TE80-XBIX AG |
| ISSN号 | 1009-1963 |
| 通讯作者 | Liu, B, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Res Ctr Funct Semicond Film Engn & Technol, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Multidisciplinary |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95383]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, B,Song, ZT,Zhang, T,et al. Novel material for nonvolatile ovonic unified memory (OUM)-Ag11In12Te26Sb51 phase change semiconductor[J]. CHINESE PHYSICS,2004,13(7):1167-1170. |
| APA | Liu, B,Song, ZT,Zhang, T,Feng, SL,&Gan, FX.(2004).Novel material for nonvolatile ovonic unified memory (OUM)-Ag11In12Te26Sb51 phase change semiconductor.CHINESE PHYSICS,13(7),1167-1170. |
| MLA | Liu, B,et al."Novel material for nonvolatile ovonic unified memory (OUM)-Ag11In12Te26Sb51 phase change semiconductor".CHINESE PHYSICS 13.7(2004):1167-1170. |
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