Comparative study of SOI/Si hybrid substrates fabricated using high-dose and low-dose oxygen implantation
文献类型：期刊论文
| 作者 | Dong, YM ; Chen, M ; Chen, J ; Wang, X ; Wang, X |
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 出版日期 | 2004 |
| 卷号 | 37期号:13页码:1732-1735 |
| 关键词 | BURIED OXIDE LAYERS ION-IMPLANTATION SILICON OXIDATION |
| ISSN号 | 0022-3727 |
| 通讯作者 | Dong, YM, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Ion Beam Lab, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95384]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Dong, YM,Chen, M,Chen, J,et al. Comparative study of SOI/Si hybrid substrates fabricated using high-dose and low-dose oxygen implantation[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2004,37(13):1732-1735. |
| APA | Dong, YM,Chen, M,Chen, J,Wang, X,&Wang, X.(2004).Comparative study of SOI/Si hybrid substrates fabricated using high-dose and low-dose oxygen implantation.JOURNAL OF PHYSICS D-APPLIED PHYSICS,37(13),1732-1735. |
| MLA | Dong, YM,et al."Comparative study of SOI/Si hybrid substrates fabricated using high-dose and low-dose oxygen implantation".JOURNAL OF PHYSICS D-APPLIED PHYSICS 37.13(2004):1732-1735. |
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