中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Studies on silicon-on-insulator-multilayer structures prepared by epitaxial layer transfer

文献类型:期刊论文

作者Xie, XY ; Lin, Q ; Liu, WL ; Lin, CL
刊名MATERIALS LETTERS
出版日期2004
卷号58期号:3-4页码:465-469
关键词ION-BEAM SYNTHESIS NITRIDE
ISSN号0167-577X
通讯作者Xie, XY, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题Materials Science, Multidisciplinary; Physics, Applied
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95395]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Xie, XY,Lin, Q,Liu, WL,et al. Studies on silicon-on-insulator-multilayer structures prepared by epitaxial layer transfer[J]. MATERIALS LETTERS,2004,58(3-4):465-469.
APA Xie, XY,Lin, Q,Liu, WL,&Lin, CL.(2004).Studies on silicon-on-insulator-multilayer structures prepared by epitaxial layer transfer.MATERIALS LETTERS,58(3-4),465-469.
MLA Xie, XY,et al."Studies on silicon-on-insulator-multilayer structures prepared by epitaxial layer transfer".MATERIALS LETTERS 58.3-4(2004):465-469.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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