Thermal quenching behavior of Er-doped silicon-rich SiO2 prepared by ion implantation
文献类型：期刊论文
| 作者 | Zhang,CS ; Xiao,HB ; Wang,YJ ; Chen,ZJ ; Cheng,XL ; Zhang,F |
| 刊名 | JOURNAL OF MATERIALS RESEARCH
 |
| 出版日期 | 2004 |
| 卷号 | 19期号:9页码:2699-2702 |
| 关键词 | CRYSTALLINE SI THIN-FILMS ELECTROLUMINESCENCE LUMINESCENCE ENVIRONMENT EXCITATION |
| ISSN号 | 0884-2914 |
| 通讯作者 | Zhang, CS, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr Semicond Funct Film Engn Technol, Shanghai 200050, Peoples R China |
| 学科主题 | Materials Science, Multidisciplinary |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95402]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang,CS,Xiao,HB,Wang,YJ,et al. Thermal quenching behavior of Er-doped silicon-rich SiO2 prepared by ion implantation[J]. JOURNAL OF MATERIALS RESEARCH,2004,19(9):2699-2702. |
| APA | Zhang,CS,Xiao,HB,Wang,YJ,Chen,ZJ,Cheng,XL,&Zhang,F.(2004).Thermal quenching behavior of Er-doped silicon-rich SiO2 prepared by ion implantation.JOURNAL OF MATERIALS RESEARCH,19(9),2699-2702. |
| MLA | Zhang,CS,et al."Thermal quenching behavior of Er-doped silicon-rich SiO2 prepared by ion implantation".JOURNAL OF MATERIALS RESEARCH 19.9(2004):2699-2702. |
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