Oxygen segregation and Ge diffusion in annealed oxygen ion-implanted relaxed SiGe/Si heterostructures
文献类型：期刊论文
| 作者 | An, ZH ; Zhang, M ; Fu, RKY ; Chu, PK ; Lin, CL |
| 刊名 | JOURNAL OF ELECTRONIC MATERIALS
 |
| 出版日期 | 2004 |
| 卷号 | 33期号:3页码:207-212 |
| 关键词 | HOLE MOBILITY ENHANCEMENT STRAIN RELAXATION ELECTRON MECHANISM HYDROGEN MOSFETS LAYER |
| ISSN号 | 0361-5235 |
| 通讯作者 | An, ZH, City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95409]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | An, ZH,Zhang, M,Fu, RKY,et al. Oxygen segregation and Ge diffusion in annealed oxygen ion-implanted relaxed SiGe/Si heterostructures[J]. JOURNAL OF ELECTRONIC MATERIALS,2004,33(3):207-212. |
| APA | An, ZH,Zhang, M,Fu, RKY,Chu, PK,&Lin, CL.(2004).Oxygen segregation and Ge diffusion in annealed oxygen ion-implanted relaxed SiGe/Si heterostructures.JOURNAL OF ELECTRONIC MATERIALS,33(3),207-212. |
| MLA | An, ZH,et al."Oxygen segregation and Ge diffusion in annealed oxygen ion-implanted relaxed SiGe/Si heterostructures".JOURNAL OF ELECTRONIC MATERIALS 33.3(2004):207-212. |
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