Patterned buried oxide layers under a single MOSFET to improve the device performance
文献类型：期刊论文
| 作者 | Dong, YM ; Chen, M ; Chen, J ; Wang, X ; Wang, X ; He, P ; Lin, X ; Tian, LL ; Li, ZJ |
| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2004 |
| 卷号 | 19期号:3页码:L25-L28 |
| 关键词 | SOI MOSFETS IMPLANTATION SEPARATION |
| ISSN号 | 0268-1242 |
| 通讯作者 | Dong, YM, Chinese Acad Sci, Ion Beam Lab, Shanghai Inst Microsyst & Informat Technol, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95411]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Dong, YM,Chen, M,Chen, J,et al. Patterned buried oxide layers under a single MOSFET to improve the device performance[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2004,19(3):L25-L28. |
| APA | Dong, YM.,Chen, M.,Chen, J.,Wang, X.,Wang, X.,...&Li, ZJ.(2004).Patterned buried oxide layers under a single MOSFET to improve the device performance.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,19(3),L25-L28. |
| MLA | Dong, YM,et al."Patterned buried oxide layers under a single MOSFET to improve the device performance".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 19.3(2004):L25-L28. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。