Fabrication of thick, high-quality strained SiGe layer on ultra-thin silicon-on-insulator and modeling of film strain
文献类型：期刊论文
| 作者 | Di, ZF ; Zhang, M ; Liu, WL ; Lin, CL ; Chu, PK |
| 刊名 | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
 |
| 出版日期 | 2004 |
| 卷号 | 7期号:4-6页码:393-397 |
| 关键词 | COMPLIANT SUBSTRATE RAMAN-SCATTERING INFRARED DETECTORS ALLOYS TRANSISTORS MOBILITY GROWTH HOLE ENHANCEMENT TRANSPORT |
| ISSN号 | 1369-8001 |
| 通讯作者 | Chu, PK, City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95428]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Di, ZF,Zhang, M,Liu, WL,et al. Fabrication of thick, high-quality strained SiGe layer on ultra-thin silicon-on-insulator and modeling of film strain[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2004,7(4-6):393-397. |
| APA | Di, ZF,Zhang, M,Liu, WL,Lin, CL,&Chu, PK.(2004).Fabrication of thick, high-quality strained SiGe layer on ultra-thin silicon-on-insulator and modeling of film strain.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,7(4-6),393-397. |
| MLA | Di, ZF,et al."Fabrication of thick, high-quality strained SiGe layer on ultra-thin silicon-on-insulator and modeling of film strain".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 7.4-6(2004):393-397. |
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