中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Microstructure investigation of BaxSr1-xTiO3 thin film grown on porous silicon substrate

文献类型:期刊论文

作者Liu, WL ; Xing, S ; Lian, J ; Wang, LM ; Song, ZT ; Lin, CL ; Xu, ZK ; Chu, PK
刊名MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
出版日期2004
卷号7期号:4-6页码:253-258
关键词EPITAXIAL LAYER TRANSFER SI HETEROEPITAXY
ISSN号1369-8001
通讯作者Liu, WL, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95429]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Liu, WL,Xing, S,Lian, J,et al. Microstructure investigation of BaxSr1-xTiO3 thin film grown on porous silicon substrate[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2004,7(4-6):253-258.
APA Liu, WL.,Xing, S.,Lian, J.,Wang, LM.,Song, ZT.,...&Chu, PK.(2004).Microstructure investigation of BaxSr1-xTiO3 thin film grown on porous silicon substrate.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,7(4-6),253-258.
MLA Liu, WL,et al."Microstructure investigation of BaxSr1-xTiO3 thin film grown on porous silicon substrate".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 7.4-6(2004):253-258.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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