Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator
文献类型：期刊论文
| 作者 | Chen, P ; An, ZH ; Zhu, M ; Fu, RKY ; Chu, PK ; Montgomery, N ; Biswas, S |
| 刊名 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
 |
| 出版日期 | 2004 |
| 卷号 | 114页码:251-254 |
| 关键词 | TRANSIENT ENHANCED DIFFUSION BURIED SIO2 |
| ISSN号 | 0921-5107 |
| 通讯作者 | Chu, PK, City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China |
| 学科主题 | Materials Science, Multidisciplinary; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95434]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, P,An, ZH,Zhu, M,et al. Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,2004,114:251-254. |
| APA | Chen, P.,An, ZH.,Zhu, M.,Fu, RKY.,Chu, PK.,...&Biswas, S.(2004).Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,114,251-254. |
| MLA | Chen, P,et al."Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 114(2004):251-254. |
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