Format ion of silicon on plasma synthesized aluminum nitride structure by ion cutting
文献类型：期刊论文
| 作者 | Zhu, M ; Chen, P ; Fu, RKY ; Liu, WL ; Lin, CL ; Chu, PK |
| 刊名 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
 |
| 出版日期 | 2004 |
| 卷号 | 22期号:6页码:2748-2753 |
| 关键词 | SMART-CUT(R) PROCESS IMPLANTATION FILMS INSULATOR TECHNOLOGY DIAMOND FABRICATION DEPOSITION NITROGEN SI |
| ISSN号 | 1071-1023 |
| 通讯作者 | Chu, PK, City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95436]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhu, M,Chen, P,Fu, RKY,et al. Format ion of silicon on plasma synthesized aluminum nitride structure by ion cutting[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2004,22(6):2748-2753. |
| APA | Zhu, M,Chen, P,Fu, RKY,Liu, WL,Lin, CL,&Chu, PK.(2004).Format ion of silicon on plasma synthesized aluminum nitride structure by ion cutting.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,22(6),2748-2753. |
| MLA | Zhu, M,et al."Format ion of silicon on plasma synthesized aluminum nitride structure by ion cutting".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 22.6(2004):2748-2753. |
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