Ge condensation characterization of SiGe-On-Insulator structure fabricated by separation of oxygen implantation
文献类型：期刊论文
| 作者 | Chen,ZJ ; Zhang,F ; Zhang,ZX ; Bo,J ; Wang,X ; Zou,SC |
| 刊名 | 2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS
 |
| 出版日期 | 2004 |
| 期号 | 0页码:2187-2189 |
| 关键词 | STRAINED-SI MOBILITY ENHANCEMENT SIMOX TECHNOLOGY ELECTRON SILICON MOSFETS LAYER |
| 通讯作者 | Chen, ZJ, Shanghai Inst Microsyst & Informat Technol, Res Ctr Semicond Funct Film Engn Technol, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering ; Electrical & Electronic; Materials Science ; Multidisciplinary; Physics ; Condensed Matter |
| 收录类别 | SCI |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95439]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen,ZJ,Zhang,F,Zhang,ZX,et al. Ge condensation characterization of SiGe-On-Insulator structure fabricated by separation of oxygen implantation[J]. 2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS,2004(0):2187-2189. |
| APA | Chen,ZJ,Zhang,F,Zhang,ZX,Bo,J,Wang,X,&Zou,SC.(2004).Ge condensation characterization of SiGe-On-Insulator structure fabricated by separation of oxygen implantation.2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS(0),2187-2189. |
| MLA | Chen,ZJ,et al."Ge condensation characterization of SiGe-On-Insulator structure fabricated by separation of oxygen implantation".2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS .0(2004):2187-2189. |
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