Comparison of fabrication techniques of SIMON materials with buried multi-layers
文献类型：期刊论文
| 作者 | Yi,Wanbing ; Chen,Meng ; Zhang,Enxia ; Liu,Xianghua ; Chen,Jing ; Dong,Yemin ; Jin,Bo ; Liu,Zhongli ; Wang,Xi |
| 刊名 | Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
 |
| 出版日期 | 2004 |
| 卷号 | 25期号:7页码:814-818 |
| 中文摘要 | SIMON SOI materials are successfully fabricated by sequential implantation and annealing of oxygen and nitrogen ions with quite a few combinatorial dose-energy-sequence conditions. The results indicate that superior SIMON SOI wafers with highly sharp inte |
| 收录类别 | SCI |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95442]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yi,Wanbing,Chen,Meng,Zhang,Enxia,et al. Comparison of fabrication techniques of SIMON materials with buried multi-layers[J]. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,2004,25(7):814-818. |
| APA | Yi,Wanbing.,Chen,Meng.,Zhang,Enxia.,Liu,Xianghua.,Chen,Jing.,...&Wang,Xi.(2004).Comparison of fabrication techniques of SIMON materials with buried multi-layers.Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,25(7),814-818. |
| MLA | Yi,Wanbing,et al."Comparison of fabrication techniques of SIMON materials with buried multi-layers".Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 25.7(2004):814-818. |
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