Composition, structure and optical properties of SiC buried layer formed by high dose carbon implantation into Si using metal vapor vacuum arc ion source
文献类型：期刊论文
| 作者 | Chen, DH ; Wong, SP ; Yang, SH ; Mo, D |
| 刊名 | THIN SOLID FILMS
 |
| 出版日期 | 2003 |
| 卷号 | 426期号:1-2页码:1-7 |
| 关键词 | BEAM SYNTHESIS SILICON XPS |
| ISSN号 | 0040-6090 |
| 通讯作者 | Chen, DH, Zhongshan Univ, Sch Phys & Engn, Guangzhou 510275, Peoples R China |
| 学科主题 | Materials Science, Multidisciplinary; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95475]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, DH,Wong, SP,Yang, SH,et al. Composition, structure and optical properties of SiC buried layer formed by high dose carbon implantation into Si using metal vapor vacuum arc ion source[J]. THIN SOLID FILMS,2003,426(1-2):1-7. |
| APA | Chen, DH,Wong, SP,Yang, SH,&Mo, D.(2003).Composition, structure and optical properties of SiC buried layer formed by high dose carbon implantation into Si using metal vapor vacuum arc ion source.THIN SOLID FILMS,426(1-2),1-7. |
| MLA | Chen, DH,et al."Composition, structure and optical properties of SiC buried layer formed by high dose carbon implantation into Si using metal vapor vacuum arc ion source".THIN SOLID FILMS 426.1-2(2003):1-7. |
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