Low temperature PECVD SiNx films applied in OLED packaging
文献类型:期刊论文
作者 | Huang,WD ; Wang,XH ; Sheng,M ; Xu,LQ ; Stubhan,F ; Luo,L ; Feng,T ; Wang,X ; Zhang,FM ; Zou,SC |
刊名 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
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出版日期 | 2003 |
卷号 | 98期号:3页码:248-254 |
关键词 | LIGHT-EMITTING DEVICES DEPOSITED SILICON-NITRIDE ELECTROLUMINESCENT DEVICES N FILMS DIODES DEGRADATION PASSIVATION LAYERS GROWTH |
ISSN号 | 0921-5107 |
通讯作者 | Huang, WD, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Labs Transducer Technol, Shanghai 200050, Peoples R China |
学科主题 | Materials Science ; Multidisciplinary; Physics ; Condensed Matter |
收录类别 | SCI |
公开日期 | 2012-03-24 |
源URL | [http://ir.sim.ac.cn/handle/331004/95482] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Huang,WD,Wang,XH,Sheng,M,et al. Low temperature PECVD SiNx films applied in OLED packaging[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,2003,98(3):248-254. |
APA | Huang,WD.,Wang,XH.,Sheng,M.,Xu,LQ.,Stubhan,F.,...&Zou,SC.(2003).Low temperature PECVD SiNx films applied in OLED packaging.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,98(3),248-254. |
MLA | Huang,WD,et al."Low temperature PECVD SiNx films applied in OLED packaging".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 98.3(2003):248-254. |
入库方式: OAI收割
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