中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Low temperature PECVD SiNx films applied in OLED packaging

文献类型:期刊论文

作者Huang,WD ; Wang,XH ; Sheng,M ; Xu,LQ ; Stubhan,F ; Luo,L ; Feng,T ; Wang,X ; Zhang,FM ; Zou,SC
刊名MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
出版日期2003
卷号98期号:3页码:248-254
关键词LIGHT-EMITTING DEVICES DEPOSITED SILICON-NITRIDE ELECTROLUMINESCENT DEVICES N FILMS DIODES DEGRADATION PASSIVATION LAYERS GROWTH
ISSN号0921-5107
通讯作者Huang, WD, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Labs Transducer Technol, Shanghai 200050, Peoples R China
学科主题Materials Science ; Multidisciplinary; Physics ; Condensed Matter
收录类别SCI
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95482]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Huang,WD,Wang,XH,Sheng,M,et al. Low temperature PECVD SiNx films applied in OLED packaging[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,2003,98(3):248-254.
APA Huang,WD.,Wang,XH.,Sheng,M.,Xu,LQ.,Stubhan,F.,...&Zou,SC.(2003).Low temperature PECVD SiNx films applied in OLED packaging.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,98(3),248-254.
MLA Huang,WD,et al."Low temperature PECVD SiNx films applied in OLED packaging".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 98.3(2003):248-254.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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