Investigation of thermal property of novel DSOI MOSFETs fabricated with local SIMOX technique
文献类型：期刊论文
| 作者 | Lin,Xi ; He,Ping ; Tian,Lilin ; Li,Zhijian ; Dong,Yemin ; Chen,Meng ; Wang,Xi |
| 刊名 | Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
 |
| 出版日期 | 2003 |
| 卷号 | 24期号:2页码:117-121 |
| 中文摘要 | DSOI, bulk-Si and SOI MOSFETs are fabricated on the same die successfully using local oxygen implantation process. The thermal properties of the three kinds of devices are described and compared from simulation and measurement. Both simulation and measure |
| 收录类别 | SCI |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95496]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Lin,Xi,He,Ping,Tian,Lilin,et al. Investigation of thermal property of novel DSOI MOSFETs fabricated with local SIMOX technique[J]. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,2003,24(2):117-121. |
| APA | Lin,Xi.,He,Ping.,Tian,Lilin.,Li,Zhijian.,Dong,Yemin.,...&Wang,Xi.(2003).Investigation of thermal property of novel DSOI MOSFETs fabricated with local SIMOX technique.Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,24(2),117-121. |
| MLA | Lin,Xi,et al."Investigation of thermal property of novel DSOI MOSFETs fabricated with local SIMOX technique".Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 24.2(2003):117-121. |
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