Formation of ultra-thin silicon-on-insulator materials by low-dose low-energy oxygen ion implantation
文献类型：期刊论文
| 作者 | Wang, X ; Chen, J ; Dong, YM ; Chen, M ; Wang, X |
| 刊名 | CHEMICAL PHYSICS LETTERS
 |
| 出版日期 | 2003 |
| 卷号 | 367期号:1-2页码:44-48 |
| 关键词 | DISLOCATION DENSITY SIMOX WAFERS LAYERS |
| ISSN号 | 0009-2614 |
| 通讯作者 | Wang, X, Chinese Acad Sci, Ion Beam Lab, Shanghai Inst Microsyst & Informat Technol, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Chemistry, Physical; Physics, Atomic, Molecular & Chemical |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95500]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, X,Chen, J,Dong, YM,et al. Formation of ultra-thin silicon-on-insulator materials by low-dose low-energy oxygen ion implantation[J]. CHEMICAL PHYSICS LETTERS,2003,367(1-2):44-48. |
| APA | Wang, X,Chen, J,Dong, YM,Chen, M,&Wang, X.(2003).Formation of ultra-thin silicon-on-insulator materials by low-dose low-energy oxygen ion implantation.CHEMICAL PHYSICS LETTERS,367(1-2),44-48. |
| MLA | Wang, X,et al."Formation of ultra-thin silicon-on-insulator materials by low-dose low-energy oxygen ion implantation".CHEMICAL PHYSICS LETTERS 367.1-2(2003):44-48. |
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