Microstructural and electrical properties of ZrO2 thin films prepared on silicon on insulator with thin top silicon
文献类型：期刊论文
| 作者 | Zhang, NL ; Song, ZT ; Shen, QW ; Lin, CL |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2003 |
| 卷号 | 20期号:2页码:273-276 |
| 关键词 | FIELD-EFFECT-TRANSISTORS K GATE DIELECTRICS THERMAL-STABILITY RELIABILITY SI |
| ISSN号 | 0256-307X |
| 通讯作者 | Zhang, NL, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Multidisciplinary |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95501]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, NL,Song, ZT,Shen, QW,et al. Microstructural and electrical properties of ZrO2 thin films prepared on silicon on insulator with thin top silicon[J]. CHINESE PHYSICS LETTERS,2003,20(2):273-276. |
| APA | Zhang, NL,Song, ZT,Shen, QW,&Lin, CL.(2003).Microstructural and electrical properties of ZrO2 thin films prepared on silicon on insulator with thin top silicon.CHINESE PHYSICS LETTERS,20(2),273-276. |
| MLA | Zhang, NL,et al."Microstructural and electrical properties of ZrO2 thin films prepared on silicon on insulator with thin top silicon".CHINESE PHYSICS LETTERS 20.2(2003):273-276. |
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