Relaxed silicon-germanium-on-insulator substrates by oxygen implantation into pseudomorphic silicon germanium/silicon heterostructure
文献类型：期刊论文
| 作者 | An, ZH ; Wu, YJ ; Zhang, M ; Di, ZF ; Lin, CL ; Fu, RKY ; Chen, P ; Chu, PK ; Cheung, WY ; Wong, SP |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2003 |
| 卷号 | 82期号:15页码:2452-2454 |
| 关键词 | HOLE MOBILITY ENHANCEMENT STRAINED-SI ELECTRON MOSFETS LAYER |
| ISSN号 | 0003-6951 |
| 通讯作者 | Chu, PK, City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China |
| 学科主题 | Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95506]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | An, ZH,Wu, YJ,Zhang, M,et al. Relaxed silicon-germanium-on-insulator substrates by oxygen implantation into pseudomorphic silicon germanium/silicon heterostructure[J]. APPLIED PHYSICS LETTERS,2003,82(15):2452-2454. |
| APA | An, ZH.,Wu, YJ.,Zhang, M.,Di, ZF.,Lin, CL.,...&Wong, SP.(2003).Relaxed silicon-germanium-on-insulator substrates by oxygen implantation into pseudomorphic silicon germanium/silicon heterostructure.APPLIED PHYSICS LETTERS,82(15),2452-2454. |
| MLA | An, ZH,et al."Relaxed silicon-germanium-on-insulator substrates by oxygen implantation into pseudomorphic silicon germanium/silicon heterostructure".APPLIED PHYSICS LETTERS 82.15(2003):2452-2454. |
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