High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxy
文献类型：期刊论文
| 作者 | Li, AZ ; Chen, YQ ; Chen, JX ; Qi, M ; Liu, XC ; Chen, J ; Wang, RM ; Wang, WL ; Li, WX |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2003 |
| 卷号 | 251期号:1-4页码:816-821 |
| 关键词 | POWER |
| ISSN号 | 0022-0248 |
| 通讯作者 | Li, AZ, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Crystallography; Materials Science, Multidisciplinary; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95518]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, AZ,Chen, YQ,Chen, JX,et al. High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2003,251(1-4):816-821. |
| APA | Li, AZ.,Chen, YQ.,Chen, JX.,Qi, M.,Liu, XC.,...&Li, WX.(2003).High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,251(1-4),816-821. |
| MLA | Li, AZ,et al."High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 251.1-4(2003):816-821. |
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