中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Fabrication and characterization of thick porous silicon layers for rf circuits

文献类型:期刊论文

作者You, SZ ; Long, YF ; Xu, YS ; Zhu, ZQ ; Shi, YL ; Lai, ZS ; Li, ZF ; Lu, W
刊名SENSORS AND ACTUATORS A-PHYSICAL
出版日期2003
卷号108期号:1-3页码:117-120
关键词PERFORMANCE
ISSN号0924-4247
通讯作者You, SZ, E China Normal Univ, Dept Elect Engn, Shanghai 200062, Peoples R China
学科主题Engineering, Electrical & Electronic; Instruments & Instrumentation
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95521]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
You, SZ,Long, YF,Xu, YS,et al. Fabrication and characterization of thick porous silicon layers for rf circuits[J]. SENSORS AND ACTUATORS A-PHYSICAL,2003,108(1-3):117-120.
APA You, SZ.,Long, YF.,Xu, YS.,Zhu, ZQ.,Shi, YL.,...&Lu, W.(2003).Fabrication and characterization of thick porous silicon layers for rf circuits.SENSORS AND ACTUATORS A-PHYSICAL,108(1-3),117-120.
MLA You, SZ,et al."Fabrication and characterization of thick porous silicon layers for rf circuits".SENSORS AND ACTUATORS A-PHYSICAL 108.1-3(2003):117-120.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。