Fabrication of device-grade silicon-on-insulator material from appropriate matches of low oxygen implantation dose and acceleration energy
文献类型：期刊论文
| 作者 | Chen, M ; Wang, X ; Chen, J ; Dong, YM ; Yi, WB ; Liu, XH ; Wang, X |
| 刊名 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
 |
| 出版日期 | 2003 |
| 卷号 | 21期号:5页码:2001-2010 |
| 关键词 | OXIDATION ITOX PROCESS BURIED OXIDE LAYERS SIMOX WAFERS ION-IMPLANTATION TEMPERATURE SEPARATION |
| ISSN号 | 1071-1023 |
| 通讯作者 | Chen, M, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95525]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, M,Wang, X,Chen, J,et al. Fabrication of device-grade silicon-on-insulator material from appropriate matches of low oxygen implantation dose and acceleration energy[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2003,21(5):2001-2010. |
| APA | Chen, M.,Wang, X.,Chen, J.,Dong, YM.,Yi, WB.,...&Wang, X.(2003).Fabrication of device-grade silicon-on-insulator material from appropriate matches of low oxygen implantation dose and acceleration energy.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,21(5),2001-2010. |
| MLA | Chen, M,et al."Fabrication of device-grade silicon-on-insulator material from appropriate matches of low oxygen implantation dose and acceleration energy".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 21.5(2003):2001-2010. |
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