Dielectric properties of AlN thin films formed by ion beam enhanced deposition
文献类型：期刊论文
| 作者 | Song,ZR ; Yu,YH ; Shen,DS ; Zou,SC ; Zheng,ZH ; Luo,EZ ; Xie,Z |
| 刊名 | MATERIALS LETTERS
 |
| 出版日期 | 2003 |
| 卷号 | 57期号:30页码:4643-4647 |
| 关键词 | SILICON GROWTH |
| ISSN号 | 0167-577X |
| 通讯作者 | Song, ZR, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Ion Beam Lab, Shanghai 200050, Peoples R China |
| 学科主题 | Materials Science ; Multidisciplinary; Physics ; Applied |
| 收录类别 | SCI |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95529]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Song,ZR,Yu,YH,Shen,DS,et al. Dielectric properties of AlN thin films formed by ion beam enhanced deposition[J]. MATERIALS LETTERS,2003,57(30):4643-4647. |
| APA | Song,ZR.,Yu,YH.,Shen,DS.,Zou,SC.,Zheng,ZH.,...&Xie,Z.(2003).Dielectric properties of AlN thin films formed by ion beam enhanced deposition.MATERIALS LETTERS,57(30),4643-4647. |
| MLA | Song,ZR,et al."Dielectric properties of AlN thin films formed by ion beam enhanced deposition".MATERIALS LETTERS 57.30(2003):4643-4647. |
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