中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Influence of surface morphology on the field emission properties of planar SiC/Si heterostructures formed by ion beam synthesis

文献类型:期刊论文

作者Chen, DH ; Wong, SP ; Cheung, WY ; Xu, JB
刊名SOLID STATE COMMUNICATIONS
出版日期2003
卷号128期号:11页码:435-439
关键词NEGATIVE ELECTRON-AFFINITY CUBIC BORON-NITRIDE DIAMOND FILMS EMITTERS
ISSN号0038-1098
通讯作者Chen, DH, Zhongshan Univ, Dept Phys, Guangzhou 510275, Peoples R China
学科主题Physics, Condensed Matter
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95531]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Chen, DH,Wong, SP,Cheung, WY,et al. Influence of surface morphology on the field emission properties of planar SiC/Si heterostructures formed by ion beam synthesis[J]. SOLID STATE COMMUNICATIONS,2003,128(11):435-439.
APA Chen, DH,Wong, SP,Cheung, WY,&Xu, JB.(2003).Influence of surface morphology on the field emission properties of planar SiC/Si heterostructures formed by ion beam synthesis.SOLID STATE COMMUNICATIONS,128(11),435-439.
MLA Chen, DH,et al."Influence of surface morphology on the field emission properties of planar SiC/Si heterostructures formed by ion beam synthesis".SOLID STATE COMMUNICATIONS 128.11(2003):435-439.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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