Influence of surface morphology on the field emission properties of planar SiC/Si heterostructures formed by ion beam synthesis
文献类型:期刊论文
作者 | Chen, DH ; Wong, SP ; Cheung, WY ; Xu, JB |
刊名 | SOLID STATE COMMUNICATIONS
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出版日期 | 2003 |
卷号 | 128期号:11页码:435-439 |
关键词 | NEGATIVE ELECTRON-AFFINITY CUBIC BORON-NITRIDE DIAMOND FILMS EMITTERS |
ISSN号 | 0038-1098 |
通讯作者 | Chen, DH, Zhongshan Univ, Dept Phys, Guangzhou 510275, Peoples R China |
学科主题 | Physics, Condensed Matter |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2012-03-24 |
源URL | [http://ir.sim.ac.cn/handle/331004/95531] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Chen, DH,Wong, SP,Cheung, WY,et al. Influence of surface morphology on the field emission properties of planar SiC/Si heterostructures formed by ion beam synthesis[J]. SOLID STATE COMMUNICATIONS,2003,128(11):435-439. |
APA | Chen, DH,Wong, SP,Cheung, WY,&Xu, JB.(2003).Influence of surface morphology on the field emission properties of planar SiC/Si heterostructures formed by ion beam synthesis.SOLID STATE COMMUNICATIONS,128(11),435-439. |
MLA | Chen, DH,et al."Influence of surface morphology on the field emission properties of planar SiC/Si heterostructures formed by ion beam synthesis".SOLID STATE COMMUNICATIONS 128.11(2003):435-439. |
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