中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
High frequency capacitance-voltage characterization of Al2O3/ZrO2/Al2O3 in fully depleted silicon-on-insulator metal-oxide-semiconductor capacitors

文献类型:期刊论文

作者Zhang, NL ; Song, ZT ; Shen, QW ; Wu, YJ ; Liu, QB ; Lin, CL ; Duo, XZ ; Zheng, LR ; Ding, YF ; Zhu, ZQ
刊名APPLIED PHYSICS LETTERS
出版日期2003
卷号83期号:25页码:5238-5240
关键词ZRO2/SIO2/SI LAYERED STRUCTURE THERMAL-STABILITY MOS CAPACITORS FILM ZRO2 DIELECTRICS HFO2
ISSN号0003-6951
通讯作者Zhang, NL, CAS, Shanghai Inst Microsyst & Informat Technol, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题Physics, Applied
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95538]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Zhang, NL,Song, ZT,Shen, QW,et al. High frequency capacitance-voltage characterization of Al2O3/ZrO2/Al2O3 in fully depleted silicon-on-insulator metal-oxide-semiconductor capacitors[J]. APPLIED PHYSICS LETTERS,2003,83(25):5238-5240.
APA Zhang, NL.,Song, ZT.,Shen, QW.,Wu, YJ.,Liu, QB.,...&Zhu, ZQ.(2003).High frequency capacitance-voltage characterization of Al2O3/ZrO2/Al2O3 in fully depleted silicon-on-insulator metal-oxide-semiconductor capacitors.APPLIED PHYSICS LETTERS,83(25),5238-5240.
MLA Zhang, NL,et al."High frequency capacitance-voltage characterization of Al2O3/ZrO2/Al2O3 in fully depleted silicon-on-insulator metal-oxide-semiconductor capacitors".APPLIED PHYSICS LETTERS 83.25(2003):5238-5240.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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