中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Correlation between microstructural and electroluminescent properties of Ge-SiO2 composite films

文献类型:期刊论文

作者Lu, MJ ; Wu, XM ; Yao, WG
刊名MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
出版日期2003
卷号100期号:2页码:152-155
关键词POROUS SILICON QUANTUM DOTS SI LUMINESCENCE PHOTOLUMINESCENCE NANOCRYSTALS
ISSN号0921-5107
通讯作者Yao, WG, Suzhou Univ, Dept Phys, Suzhou 215006, Peoples R China
学科主题Materials Science, Multidisciplinary; Physics, Condensed Matter
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95551]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Lu, MJ,Wu, XM,Yao, WG. Correlation between microstructural and electroluminescent properties of Ge-SiO2 composite films[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,2003,100(2):152-155.
APA Lu, MJ,Wu, XM,&Yao, WG.(2003).Correlation between microstructural and electroluminescent properties of Ge-SiO2 composite films.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,100(2),152-155.
MLA Lu, MJ,et al."Correlation between microstructural and electroluminescent properties of Ge-SiO2 composite films".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 100.2(2003):152-155.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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