中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Characteristics and polarization-enhanced model of wurtzite aluminum nitride thin films synthesized on Si(100) substrates by pulsed laser deposition

文献类型:期刊论文

作者An, ZH ; Men, CL ; Yu, J ; Chu, PK ; Lin, CL
刊名JOURNAL OF APPLIED PHYSICS
出版日期2003
卷号94期号:3页码:1934-1940
关键词CHEMICAL-VAPOR-DEPOSITION EPITAXIAL-GROWTH ALN FILMS ROOM-TEMPERATURE A1N FILMS SAPPHIRE HETEROSTRUCTURES MORPHOLOGY ABLATION SI(111)
ISSN号0021-8979
通讯作者Chu, PK, City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
学科主题Physics, Applied
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95552]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
An, ZH,Men, CL,Yu, J,et al. Characteristics and polarization-enhanced model of wurtzite aluminum nitride thin films synthesized on Si(100) substrates by pulsed laser deposition[J]. JOURNAL OF APPLIED PHYSICS,2003,94(3):1934-1940.
APA An, ZH,Men, CL,Yu, J,Chu, PK,&Lin, CL.(2003).Characteristics and polarization-enhanced model of wurtzite aluminum nitride thin films synthesized on Si(100) substrates by pulsed laser deposition.JOURNAL OF APPLIED PHYSICS,94(3),1934-1940.
MLA An, ZH,et al."Characteristics and polarization-enhanced model of wurtzite aluminum nitride thin films synthesized on Si(100) substrates by pulsed laser deposition".JOURNAL OF APPLIED PHYSICS 94.3(2003):1934-1940.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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