Characterization of nano-sized Si islands in buried oxide layer of SIMOX by Conducting AFM
文献类型：期刊论文
| 作者 | Chen, KW ; Yu, YH ; Luo, EZ ; Xie, Z ; Xu, JB ; Wilson, IH ; Bishop, WY ; Shen, DS |
| 刊名 | CHEMICAL PHYSICS LETTERS
 |
| 出版日期 | 2003 |
| 卷号 | 376期号:5-6页码:748-752 |
| 关键词 | ON-INSULATOR TECHNOLOGY |
| ISSN号 | 0009-2614 |
| 通讯作者 | Chen, KW, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Ion Beam Lab, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Chemistry, Physical; Physics, Atomic, Molecular & Chemical |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95555]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, KW,Yu, YH,Luo, EZ,et al. Characterization of nano-sized Si islands in buried oxide layer of SIMOX by Conducting AFM[J]. CHEMICAL PHYSICS LETTERS,2003,376(5-6):748-752. |
| APA | Chen, KW.,Yu, YH.,Luo, EZ.,Xie, Z.,Xu, JB.,...&Shen, DS.(2003).Characterization of nano-sized Si islands in buried oxide layer of SIMOX by Conducting AFM.CHEMICAL PHYSICS LETTERS,376(5-6),748-752. |
| MLA | Chen, KW,et al."Characterization of nano-sized Si islands in buried oxide layer of SIMOX by Conducting AFM".CHEMICAL PHYSICS LETTERS 376.5-6(2003):748-752. |
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