Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs
文献类型：期刊论文
| 作者 | Lei, HP ; Wu, HZ ; Lao, YF ; Qi, M ; Li, AZ ; Shen, WZ |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2003 |
| 卷号 | 256期号:1-2页码:96-102 |
| 关键词 | MOLECULAR-BEAM EPITAXY QUANTUM-WELLS LASER-DIODES TEMPERATURE-DEPENDENCE BAND-STRUCTURE PHOTOLUMINESCENCE GROWTH SEMICONDUCTORS POWER |
| ISSN号 | 0022-0248 |
| 通讯作者 | Wu, HZ, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Crystallography; Materials Science, Multidisciplinary; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95561]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Lei, HP,Wu, HZ,Lao, YF,et al. Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs[J]. JOURNAL OF CRYSTAL GROWTH,2003,256(1-2):96-102. |
| APA | Lei, HP,Wu, HZ,Lao, YF,Qi, M,Li, AZ,&Shen, WZ.(2003).Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs.JOURNAL OF CRYSTAL GROWTH,256(1-2),96-102. |
| MLA | Lei, HP,et al."Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs".JOURNAL OF CRYSTAL GROWTH 256.1-2(2003):96-102. |
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