Fabrication of device-grade separation-by-implantation-of-oxygen materials by optimizing dose-energy match
文献类型：期刊论文
| 作者 | Chen,M ; Yu,YH ; Wang,X ; Wang,X ; Chen,J ; Liu,XH ; Dong,YM |
| 刊名 | JOURNAL OF MATERIALS RESEARCH
 |
| 出版日期 | 2002 |
| 卷号 | 17期号:7页码:1634-1643 |
| 关键词 | BURIED OXIDE ION-IMPLANTATION SIMOX SILICON LAYERS TEMPERATURE WAFERS |
| ISSN号 | 0884-2914 |
| 通讯作者 | Chen, M, Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China |
| 学科主题 | Materials Science ; Multidisciplinary |
| 收录类别 | SCI |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95572]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen,M,Yu,YH,Wang,X,et al. Fabrication of device-grade separation-by-implantation-of-oxygen materials by optimizing dose-energy match[J]. JOURNAL OF MATERIALS RESEARCH,2002,17(7):1634-1643. |
| APA | Chen,M.,Yu,YH.,Wang,X.,Wang,X.,Chen,J.,...&Dong,YM.(2002).Fabrication of device-grade separation-by-implantation-of-oxygen materials by optimizing dose-energy match.JOURNAL OF MATERIALS RESEARCH,17(7),1634-1643. |
| MLA | Chen,M,et al."Fabrication of device-grade separation-by-implantation-of-oxygen materials by optimizing dose-energy match".JOURNAL OF MATERIALS RESEARCH 17.7(2002):1634-1643. |
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