Schottky barrier height inhomogeneity of Ti/n-GaAs contact studied by the I-V-T technique
文献类型：期刊论文
| 作者 | Jiang, YL ; Ru, GP ; Lu, F ; Qu, XP |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2002 |
| 卷号 | 19期号:4页码:553-556 |
| 关键词 | ELECTRICAL-TRANSPORT DIODES INTERFACES |
| ISSN号 | 0256-307X |
| 通讯作者 | Ru, GP, Fudan Univ, Dept Microelect, ASIC & Syst State Key Lab, Shanghai 200433, Peoples R China |
| 学科主题 | Physics, Multidisciplinary |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95575]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Jiang, YL,Ru, GP,Lu, F,et al. Schottky barrier height inhomogeneity of Ti/n-GaAs contact studied by the I-V-T technique[J]. CHINESE PHYSICS LETTERS,2002,19(4):553-556. |
| APA | Jiang, YL,Ru, GP,Lu, F,&Qu, XP.(2002).Schottky barrier height inhomogeneity of Ti/n-GaAs contact studied by the I-V-T technique.CHINESE PHYSICS LETTERS,19(4),553-556. |
| MLA | Jiang, YL,et al."Schottky barrier height inhomogeneity of Ti/n-GaAs contact studied by the I-V-T technique".CHINESE PHYSICS LETTERS 19.4(2002):553-556. |
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