中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Memory effect in the deposition of C-20 fullerenes on a diamond surface

文献类型:期刊论文

作者Du, AJ ; Pan, ZY ; Ho, YK ; Huang, Z ; Zhang, ZX
刊名PHYSICAL REVIEW B
出版日期2002
卷号66期号:3页码:35405-35405
关键词MOLECULAR-DYNAMICS SIMULATIONS SMALLEST FULLERENE (001)-(2X1) SURFACE ROTATIONAL ENERGY CARBON-FILMS CLUSTERS BUCKMINSTERFULLERENE CHEMISORPTION DISTRIBUTIONS ADSORPTION
ISSN号1098-0121
通讯作者Du, AJ, Fudan Univ, Inst Modern Phys, State Key Lab Mat Modificat Laser Ion & Electron, Shanghai 200433, Peoples R China
学科主题Physics, Condensed Matter
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/95590]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Du, AJ,Pan, ZY,Ho, YK,et al. Memory effect in the deposition of C-20 fullerenes on a diamond surface[J]. PHYSICAL REVIEW B,2002,66(3):35405-35405.
APA Du, AJ,Pan, ZY,Ho, YK,Huang, Z,&Zhang, ZX.(2002).Memory effect in the deposition of C-20 fullerenes on a diamond surface.PHYSICAL REVIEW B,66(3),35405-35405.
MLA Du, AJ,et al."Memory effect in the deposition of C-20 fullerenes on a diamond surface".PHYSICAL REVIEW B 66.3(2002):35405-35405.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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