Increased thickness of buried oxide layer of silicon on insulator in separation by implantation of oxygen with water plasma
文献类型：期刊论文
| 作者 | Chen, J ; Chen, M ; Dong, YM ; Wang, X ; Zheng, ZH ; Wang, X |
| 刊名 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
 |
| 出版日期 | 2002 |
| 卷号 | 20期号:4页码:1570-1573 |
| 关键词 | ION-IMPLANTATION HIGH-TEMPERATURE DIFFUSION HYDROGEN MECHANISM OXIDATION SIMOX SIO2 |
| ISSN号 | 1071-1023 |
| 通讯作者 | Chen, J, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95591]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, J,Chen, M,Dong, YM,et al. Increased thickness of buried oxide layer of silicon on insulator in separation by implantation of oxygen with water plasma[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2002,20(4):1570-1573. |
| APA | Chen, J,Chen, M,Dong, YM,Wang, X,Zheng, ZH,&Wang, X.(2002).Increased thickness of buried oxide layer of silicon on insulator in separation by implantation of oxygen with water plasma.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,20(4),1570-1573. |
| MLA | Chen, J,et al."Increased thickness of buried oxide layer of silicon on insulator in separation by implantation of oxygen with water plasma".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 20.4(2002):1570-1573. |
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