Dose-energy match for the formation of high-integrity buried oxide layers in low-dose separation-by-implantation-of-oxygen materials
文献类型：期刊论文
| 作者 | Chen, M ; Wang, X ; Chen, J ; Liu, XH ; Dong, YM ; Yu, YH ; Wang, X |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2002 |
| 卷号 | 80期号:5页码:880-882 |
| 关键词 | SIMOX WAFERS TEMPERATURE |
| ISSN号 | 0003-6951 |
| 通讯作者 | Chen, M, Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95599]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, M,Wang, X,Chen, J,et al. Dose-energy match for the formation of high-integrity buried oxide layers in low-dose separation-by-implantation-of-oxygen materials[J]. APPLIED PHYSICS LETTERS,2002,80(5):880-882. |
| APA | Chen, M.,Wang, X.,Chen, J.,Liu, XH.,Dong, YM.,...&Wang, X.(2002).Dose-energy match for the formation of high-integrity buried oxide layers in low-dose separation-by-implantation-of-oxygen materials.APPLIED PHYSICS LETTERS,80(5),880-882. |
| MLA | Chen, M,et al."Dose-energy match for the formation of high-integrity buried oxide layers in low-dose separation-by-implantation-of-oxygen materials".APPLIED PHYSICS LETTERS 80.5(2002):880-882. |
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