Investigation of interface in silicon-on-insulator by fractal analysis
文献类型：期刊论文
| 作者 | Liu, XH ; Chen, J ; Chen, M ; Wang, X |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2002 |
| 卷号 | 187期号:3-4页码:187-191 |
| 关键词 | ATOMIC-FORCE MICROSCOPY SI/SIO2 INTERFACE THERMAL-OXIDATION SURFACES TOPOGRAPHY ROUGHNESS |
| ISSN号 | 0169-4332 |
| 通讯作者 | Liu, XH, Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Chemistry, Physical; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95614]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, XH,Chen, J,Chen, M,et al. Investigation of interface in silicon-on-insulator by fractal analysis[J]. APPLIED SURFACE SCIENCE,2002,187(3-4):187-191. |
| APA | Liu, XH,Chen, J,Chen, M,&Wang, X.(2002).Investigation of interface in silicon-on-insulator by fractal analysis.APPLIED SURFACE SCIENCE,187(3-4),187-191. |
| MLA | Liu, XH,et al."Investigation of interface in silicon-on-insulator by fractal analysis".APPLIED SURFACE SCIENCE 187.3-4(2002):187-191. |
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