Fabrication of silicon-on-insulator structure with Si3N4 as buried insulating films by epitaxial layer transfer
文献类型：期刊论文
| 作者 | Xie, XY ; Zhang, NL ; Men, C ; Liu, WL ; Lin, Q ; An, Z ; Lin, CL |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2002 |
| 卷号 | 245期号:3-4页码:207-211 |
| 关键词 | NITRIDE |
| ISSN号 | 0022-0248 |
| 通讯作者 | Xie, XY, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Crystallography; Materials Science, Multidisciplinary; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95624]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xie, XY,Zhang, NL,Men, C,et al. Fabrication of silicon-on-insulator structure with Si3N4 as buried insulating films by epitaxial layer transfer[J]. JOURNAL OF CRYSTAL GROWTH,2002,245(3-4):207-211. |
| APA | Xie, XY.,Zhang, NL.,Men, C.,Liu, WL.,Lin, Q.,...&Lin, CL.(2002).Fabrication of silicon-on-insulator structure with Si3N4 as buried insulating films by epitaxial layer transfer.JOURNAL OF CRYSTAL GROWTH,245(3-4),207-211. |
| MLA | Xie, XY,et al."Fabrication of silicon-on-insulator structure with Si3N4 as buried insulating films by epitaxial layer transfer".JOURNAL OF CRYSTAL GROWTH 245.3-4(2002):207-211. |
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