H distribution and strain evolution in SiGe/Si heterostructure implanted by H dimers
文献类型：期刊论文
| 作者 | An, ZH ; Men, CL ; Liu, WL ; Zhang, M ; Wu, YJ ; Xie, XY ; Chu, PK ; Lin, CL |
| 刊名 | INTERNATIONAL JOURNAL OF MODERN PHYSICS B
 |
| 出版日期 | 2002 |
| 卷号 | 16期号:28-29页码:4199-4202 |
| 关键词 | HYDROGEN IMPLANTATION LAYER TRANSFER SI SILICON FIELD |
| ISSN号 | 0217-9792 |
| 通讯作者 | An, ZH, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Applied; Physics, Condensed Matter; Physics, Mathematical |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95631]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | An, ZH,Men, CL,Liu, WL,et al. H distribution and strain evolution in SiGe/Si heterostructure implanted by H dimers[J]. INTERNATIONAL JOURNAL OF MODERN PHYSICS B,2002,16(28-29):4199-4202. |
| APA | An, ZH.,Men, CL.,Liu, WL.,Zhang, M.,Wu, YJ.,...&Lin, CL.(2002).H distribution and strain evolution in SiGe/Si heterostructure implanted by H dimers.INTERNATIONAL JOURNAL OF MODERN PHYSICS B,16(28-29),4199-4202. |
| MLA | An, ZH,et al."H distribution and strain evolution in SiGe/Si heterostructure implanted by H dimers".INTERNATIONAL JOURNAL OF MODERN PHYSICS B 16.28-29(2002):4199-4202. |
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