Formation of silicon islands free buried oxide layer by energy optimization at very low dose ion implantation
文献类型：期刊论文
| 作者 | Wang, X ; Chen, M ; Dong, YM ; Chen, J ; Wang, X ; Liu, XH |
| 刊名 | SURFACE & COATINGS TECHNOLOGY
 |
| 出版日期 | 2002 |
| 卷号 | 158页码:180-185 |
| 关键词 | SIMOX WAFERS DISLOCATION |
| ISSN号 | 0257-8972 |
| 通讯作者 | Wang, X, Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China |
| 学科主题 | Materials Science, Coatings & Films; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95648]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, X,Chen, M,Dong, YM,et al. Formation of silicon islands free buried oxide layer by energy optimization at very low dose ion implantation[J]. SURFACE & COATINGS TECHNOLOGY,2002,158:180-185. |
| APA | Wang, X,Chen, M,Dong, YM,Chen, J,Wang, X,&Liu, XH.(2002).Formation of silicon islands free buried oxide layer by energy optimization at very low dose ion implantation.SURFACE & COATINGS TECHNOLOGY,158,180-185. |
| MLA | Wang, X,et al."Formation of silicon islands free buried oxide layer by energy optimization at very low dose ion implantation".SURFACE & COATINGS TECHNOLOGY 158(2002):180-185. |
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