Mid-infrared GaInAsSb photodetector grown by solid source molecular beam epitaxy
文献类型：期刊论文
| 作者 | Lin, C ; Zheng, YL ; Li, AZ |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2001 |
| 卷号 | 227页码:605-608 |
| 关键词 | MIDINFRARED WAVELENGTHS INASSBP PHOTODETECTORS |
| ISSN号 | 0022-0248 |
| 通讯作者 | Li, AZ, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Crystallography; Materials Science, Multidisciplinary; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95654]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Lin, C,Zheng, YL,Li, AZ. Mid-infrared GaInAsSb photodetector grown by solid source molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2001,227:605-608. |
| APA | Lin, C,Zheng, YL,&Li, AZ.(2001).Mid-infrared GaInAsSb photodetector grown by solid source molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,227,605-608. |
| MLA | Lin, C,et al."Mid-infrared GaInAsSb photodetector grown by solid source molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 227(2001):605-608. |
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