Silicon-on-insulator structure fabricated by electron beam evaporation of Si on porous Si and epitaxial layer transfer
文献类型：期刊论文
| 作者 | Liu, WL ; Duo, XZ ; Wang, LW ; Zhang, M ; Shen, QW ; Lin, CL ; Chu, PK |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2001 |
| 卷号 | 18期号:5页码:662-664 |
| 关键词 | ETCH-BACK BOND GROWTH |
| ISSN号 | 0256-307X |
| 通讯作者 | Liu, WL, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Multidisciplinary |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95674]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, WL,Duo, XZ,Wang, LW,et al. Silicon-on-insulator structure fabricated by electron beam evaporation of Si on porous Si and epitaxial layer transfer[J]. CHINESE PHYSICS LETTERS,2001,18(5):662-664. |
| APA | Liu, WL.,Duo, XZ.,Wang, LW.,Zhang, M.,Shen, QW.,...&Chu, PK.(2001).Silicon-on-insulator structure fabricated by electron beam evaporation of Si on porous Si and epitaxial layer transfer.CHINESE PHYSICS LETTERS,18(5),662-664. |
| MLA | Liu, WL,et al."Silicon-on-insulator structure fabricated by electron beam evaporation of Si on porous Si and epitaxial layer transfer".CHINESE PHYSICS LETTERS 18.5(2001):662-664. |
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