Characteristics of strain compensated 1.3 mu m InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE
文献类型：期刊论文
| 作者 | Zhang, YG(张永刚） ; Chen, JX ; Chen, YQ ; Qi, M ; Li, AZ ; Frojdh, K ; Stoltz, B |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2001 |
| 卷号 | 227页码:329-333 |
| 关键词 | QUANTUM-WELL LASERS MOLECULAR-BEAM-EPITAXY HIGH-TEMPERATURE OPERATION CHEMICAL-VAPOR-DEPOSITION THRESHOLD CURRENT-DENSITY WAVELENGTH LASERS 1.3-MU-M LASERS MQW LASERS DEPENDENCE EFFICIENCY |
| ISSN号 | 0022-0248 |
| 通讯作者 | Zhang, YG, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, 865 Chang Ning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Crystallography; Materials Science, Multidisciplinary; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95676]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, YG,Chen, JX,Chen, YQ,et al. Characteristics of strain compensated 1.3 mu m InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE[J]. JOURNAL OF CRYSTAL GROWTH,2001,227:329-333. |
| APA | Zhang, YG.,Chen, JX.,Chen, YQ.,Qi, M.,Li, AZ.,...&Stoltz, B.(2001).Characteristics of strain compensated 1.3 mu m InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE.JOURNAL OF CRYSTAL GROWTH,227,329-333. |
| MLA | Zhang, YG,et al."Characteristics of strain compensated 1.3 mu m InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE".JOURNAL OF CRYSTAL GROWTH 227(2001):329-333. |
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