GSMBE grown In0.49Ga0.51P/GaAs heterojunction bipolar transistors with heavily beryllium doped base and undoped Spacer
文献类型：期刊论文
| 作者 | Chen, XJ ; Li, AZ ; Chen, JX ; Chen, YQ ; Yang, QK |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2001 |
| 卷号 | 227页码:352-356 |
| 关键词 | CURRENT TRANSPORT RECOMBINATION ALGAAS/GAAS HBTS EMITTER |
| ISSN号 | 0022-0248 |
| 通讯作者 | Li, AZ, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Crystallography; Materials Science, Multidisciplinary; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95678]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, XJ,Li, AZ,Chen, JX,et al. GSMBE grown In0.49Ga0.51P/GaAs heterojunction bipolar transistors with heavily beryllium doped base and undoped Spacer[J]. JOURNAL OF CRYSTAL GROWTH,2001,227:352-356. |
| APA | Chen, XJ,Li, AZ,Chen, JX,Chen, YQ,&Yang, QK.(2001).GSMBE grown In0.49Ga0.51P/GaAs heterojunction bipolar transistors with heavily beryllium doped base and undoped Spacer.JOURNAL OF CRYSTAL GROWTH,227,352-356. |
| MLA | Chen, XJ,et al."GSMBE grown In0.49Ga0.51P/GaAs heterojunction bipolar transistors with heavily beryllium doped base and undoped Spacer".JOURNAL OF CRYSTAL GROWTH 227(2001):352-356. |
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