Formation of silicon on insulator using separation by implantation of oxygen with water plasma
文献类型：期刊论文
| 作者 | Chen, J ; Wang, X ; Chen, M ; Zheng, ZH ; Yu, YH |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2001 |
| 卷号 | 78期号:1页码:73-75 |
| 关键词 | BURIED OXIDE SIMOX TECHNOLOGY |
| ISSN号 | 0003-6951 |
| 通讯作者 | Chen, J, Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95679]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, J,Wang, X,Chen, M,et al. Formation of silicon on insulator using separation by implantation of oxygen with water plasma[J]. APPLIED PHYSICS LETTERS,2001,78(1):73-75. |
| APA | Chen, J,Wang, X,Chen, M,Zheng, ZH,&Yu, YH.(2001).Formation of silicon on insulator using separation by implantation of oxygen with water plasma.APPLIED PHYSICS LETTERS,78(1),73-75. |
| MLA | Chen, J,et al."Formation of silicon on insulator using separation by implantation of oxygen with water plasma".APPLIED PHYSICS LETTERS 78.1(2001):73-75. |
入库方式： OAI收割
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