Comparison between the different implantation orders in H+ and He+ coimplantation
文献类型：期刊论文
| 作者 | Duo, XZ ; Liu, WL ; Zhang, MA ; Wang, LW ; Lin, CL ; Okuyama, M ; Noda, M ; Cheung, WY ; Chu, PK ; Hu, PG ; Wang, SX ; Wang, LM |
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 出版日期 | 2001 |
| 卷号 | 34期号:4页码:477-482 |
| 关键词 | POSITRON-ANNIHILATION INDUCED DEFECTS SILICON EXFOLIATION MECHANISM CAVITIES AU |
| ISSN号 | 0022-3727 |
| 通讯作者 | Duo, XZ, Chinese Acad Sci, Shanghai Inst Met, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95699]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Duo, XZ,Liu, WL,Zhang, MA,et al. Comparison between the different implantation orders in H+ and He+ coimplantation[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2001,34(4):477-482. |
| APA | Duo, XZ.,Liu, WL.,Zhang, MA.,Wang, LW.,Lin, CL.,...&Wang, LM.(2001).Comparison between the different implantation orders in H+ and He+ coimplantation.JOURNAL OF PHYSICS D-APPLIED PHYSICS,34(4),477-482. |
| MLA | Duo, XZ,et al."Comparison between the different implantation orders in H+ and He+ coimplantation".JOURNAL OF PHYSICS D-APPLIED PHYSICS 34.4(2001):477-482. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。