Defect and strain in hydrogen and helium coimplanted single-crystal silicon
文献类型：期刊论文
| 作者 | Duo, XZ ; Liu, WL ; Xing, S ; Zhang, M ; Fu, XR ; Lin, CL ; Hu, PG ; Wang, SX ; Wang, LM |
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 出版日期 | 2001 |
| 卷号 | 34期号:1页码:5-11 |
| 关键词 | INDUCED EXFOLIATION MECHANISM CAVITIES AU |
| ISSN号 | 0022-3727 |
| 通讯作者 | Duo, XZ, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/95701]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Duo, XZ,Liu, WL,Xing, S,et al. Defect and strain in hydrogen and helium coimplanted single-crystal silicon[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2001,34(1):5-11. |
| APA | Duo, XZ.,Liu, WL.,Xing, S.,Zhang, M.,Fu, XR.,...&Wang, LM.(2001).Defect and strain in hydrogen and helium coimplanted single-crystal silicon.JOURNAL OF PHYSICS D-APPLIED PHYSICS,34(1),5-11. |
| MLA | Duo, XZ,et al."Defect and strain in hydrogen and helium coimplanted single-crystal silicon".JOURNAL OF PHYSICS D-APPLIED PHYSICS 34.1(2001):5-11. |
入库方式： OAI收割
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